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laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract
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characterization of novel ultra-stable laser sources based on rare-earth ion-doped optical fibers (erbium, neodymium, or thulium) using fiber components functionalized by femtosecond photoinscription. The project
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